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Start date: 2023Subject: search.filters.subject.DC sputtering

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    Enhancing the Photoconductivity and Gas Sensing Performance of TiO2/SnO2 Heterostructures Tuned by the Thickness of the SnO2 Upper Layer
    (Elsevier B.V., 2023-03-15)
    In this report, polycrystalline TiO2/SnO2 heterostructures with variable SnO2 film thickness were deposited by DC sputtering. Scanning electron microscopy images show a cracked surface in all films. The latter gets more widespread as the SnO2 layer thickness increases with deposition time. Optical transmittance measurements were used to determine the thickness of the TiO2 and SnO2 polycrystalline films. Photocurrent measurements of pure SnO2 films using UVA irradiation revealed a good response for thinner SnO2 films, however, these decrease as film thickness increases. Besides, photocurrent response is enhanced for the TiO2/SnO2 heterostructures over pure SnO2 film. It is thought that a high photocurrent response can be produced due to the improved ability to separate the photoinduced electrons and holes, as well as due to suitable charge management at the TiO2 and SnO2 interface. Additionally, the large amount of active sites for the thinner SnO2 upper layer favors better room temperature gas response to ethanol than that obtained for single SnO2 films. These features make the TiO2/SnO2 heterostructure a promising candidate for room temperature gas sensors and photosensitivity applications.
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    Engineering dynamic defect compensation in Sn-Doped In2O3 thin films for enhanced optoelectronic performance
    (Elsevier BV, 2026-07-15)
    Sn-doped In2O3 is a typical transparent conducting oxide, yet the mechanisms governing carrier suppression and functional degradation at high doping levels remain unclear. Here, defect engineering via controlled Sn incorporation is employed to tune dynamic defect compensation, enabling direct correlation between defect chemistry and optoelectronic functionality. A non-monotonic evolution of lattice parameter and carrier density reveals two distinct regimes. At low Sn concentrations, enhanced free-electron density induces a Burstein–Moss bandgap widening. Beyond a critical doping threshold, cooperative compensation mediated by Sn4+/Sn2+ coexistence and oxygen interstitials suppresses carrier density, activating competition between bandgap renormalization and the Burstein–Moss shift. Density functional theory calculations confirm the electronic impact of this defect complex. Remarkably, the evolution of photocurrent closely mirrors the methane sensing response, demonstrating that oxygen-related defects regulate charge-transfer dynamics. These findings establish dynamic defect compensation as a tunable design principle for engineering multifunctional transparent conducting oxides.