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Item type:Publication, Development of the phase composition and the properties of Ti2AlC and Ti3AlC2 MAX-phase thin films – A multilayer approach towards high phase purity(Elsevier, 2020-09-15)MAX phase thin films have been synthesized by thermal treatment of a Ti-Al-C multilayer system. The preparation of the multilayer system was carried out via magnetron sputtering. Based on the thickness ratio among the individual nanoscale monolayers (Ti, Al, C), the resulting MAX phase stoichiometry can be controlled. This paper describes the synthesis of both Ti2AlC and Ti3AlC2 MAX phases from the same precursor multilayer system which is composed of a sequence of Ti/Al/C pure elemental single layers with thicknesses of 14, 6, and 3.5 nm, respectively. This sequence is repeated 22 times with a total thickness of around 500 nm. Rapid thermal treatment tests were performed to study the phase development. The Ti2AlC MAX phase forms in a temperature range below 850 °C, whereas the Ti3AlC2 MAX phase starts to form at temperatures above 850 °C and reaches its highest phase purity at 950 °C. The thin film structures were studied by X-ray diffraction and Raman spectroscopy. Furthermore, the electrical and mechanical properties were investigated to gain more insights regarding the phase transformation and their influence on the thin film properties. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Analysis of the physical and photoelectrochemical properties of c-Si(p)/a-SiC:H(p) photocathodes for solar water splitting(IOP Publishing Ltd, 2021-05-13)The photoelectrochemical (PEC) properties of sputtered aluminum doped hydrogenated amorphous silicon carbide thin films grown on p-type crystalline silicon substrates were investigated in 1 M H 2 S O 4 solution under chopped light illumination. Optical and structural properties of the top absorber layer were systematically assessed after post-deposition isochronical annealing treatments. Samples exhibited a noticeable improvement of the opto-electronic properties after thermal treatments. In addition, an abrupt enhancement of the photocurrent was observed reaching a saturation value of 17 mA cm −2 at −1.75 V vs. Ag/AgCl (3.5 M KCl). In this research we propose that this enhancement effect is associated to a charge transfer kinetic mechanism influenced by surface states and the p-type substrate. The latter most likely due to the space charge region extending beyond the absorber layer reaching the substrate. Current density-potential and electrochemical impedance spectroscopy measurements in dark revealed a reduction of the S i O 2 native layer at cathodic potentials higher than −1 V vs. Ag/AgCl (3.5 M KCl), which contributes to the high charge transfer kinetic of the system. We believe that these results will contribute to understand the substrate influence in the PEC performance of top absorber layers in multilayer structures for solar water splitting. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Tribological and mechanical performance of Ti2AlC and Ti3AlC2 thin films(John Wiley and Sons Inc, 2022-10-01)Mn+1AXn (MAX) phases are novel structural and functional materials with a layered crystal structure. Their unique properties such as good machinability, high electrical conductivity, low friction, and corrosion resistance are appealing for many engineering applications. Herein, Ti2AlC and Ti3AlC2 MAX thin films are synthesized by magnetron sputtering and subsequent thermal annealing. A multilayer approach is used to deposit single-element nanolayers of titanium, aluminum, and carbon onto silicon substrates with a double-layer-diffusion barrier of SiO2 and SixNy. Ti2AlC and Ti3AlC2 thin films (thickness ≈500 nm) are formed via rapid thermal annealing and verified by X-Ray diffraction. Nanoindentation tests show hardness values of about 11.6 and 5.3 GPa for Ti2AlC and Ti3AlC2, respectively. The tribological behavior of the Ti2AlC and Ti3AlC2 thin films against AISI 52100 steel balls under dry sliding conditions is studied using ball-on-flat tribometry. The resulting coefficient of friction (CoF) for Ti2AlC and Ti3AlC2 ranges between 0.21–0.42 and 0.64–0.91, respectively. The better tribological behavior observed for Ti2AlC thin films is ascribed to its smaller grain size, reduced surface roughness, and higher hardness.