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Item type:Publication, Revisiting the determination of the valence band maximum and defect formation in halide perovskites for solar cells: insights from highly sensitive near-UV photoemission spectroscopy(American Chemical Society, 2021-09-15)Using advanced near–UV photoemission spectroscopy (PES) in constant final state mode (CFSYS) with a very high dynamic range, we investigate the triple-cation lead halide perovskite Cs 0.05 (MA 0.17 FA 0.83 ) 0.95 Pb(I 0.83 Br 0.17 ) 3 and gain detailed insights into the density of occupied states (DOS) in the valence band and band gap. A valence band model is established which includes the parabolic valence band edge and an exponentially decaying band tail in a single equation. This allows us to precisely determine two valence band maxima (VBM) at different k -vectors in the angle-integrated spectra, where the highest one, resulting from the VBM at the R -point in the Brillouin zone, is found between −1.50 to −1.37 eV relative to the Fermi energy E F . We investigate quantitatively the formation of defect states in the band gap up to E F upon decomposition of the perovskites during sample transfer, storage, and measurements: during near–UV-based PES, the density of defect states saturates at a value that is around 4 orders of magnitude below the density of states at the valence band edge. However, even short air exposure, or 3 h of X-ray illumination, increased their density by almost a factor of six and ∼40, respectively. Upon prolonged storage in vacuum, the formation of a distinct defect peak is observed. Thus, near–UV CFSYS with modeling as shown here is demonstrated as a powerful tool to characterize the valence band and quantify defect states in lead halide perovskites. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Field effect passivation in perovskite solar cells by a LiF interlayer(John Wiley and Sons Inc, 2022-08-01)The fullerene C 60 is commonly applied as the electron transport layer in high‐efficiency metal halide perovskite solar cells and has been found to limit their open circuit voltage. Through ultra‐sensitive near‐UV photoelectron spectroscopy in constant final state mode (CFSYS), with an unusually high probing depth of 5–10 nm, the perovskite/C 60 interface energetics and defect formation is investigated. It is demonstrated how to consistently determine the energy level alignment by CFSYS and avoid misinterpretations by accounting for the measurement‐induced surface photovoltage in photoactive layer stacks. The energetic offset between the perovskite valence band maximum and the C 60 HOMO‐edge is directly determined to be 0.55 eV. Furthermore, the voltage enhancement upon the incorporation of a LiF interlayer at the interface can be attributed to originate from a mild dipole effect and probably the presence of fixed charges, both reducing the hole concentration in the vicinity of the perovskite/C 60 interface. This yields a field effect passivation, which overcompensates the observed enhanced defect density in the first monolayers of C 60 .