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Item type:Publication, Development of the phase composition and the properties of Ti2AlC and Ti3AlC2 MAX-phase thin films – A multilayer approach towards high phase purity(Elsevier, 2020-09-15)MAX phase thin films have been synthesized by thermal treatment of a Ti-Al-C multilayer system. The preparation of the multilayer system was carried out via magnetron sputtering. Based on the thickness ratio among the individual nanoscale monolayers (Ti, Al, C), the resulting MAX phase stoichiometry can be controlled. This paper describes the synthesis of both Ti2AlC and Ti3AlC2 MAX phases from the same precursor multilayer system which is composed of a sequence of Ti/Al/C pure elemental single layers with thicknesses of 14, 6, and 3.5 nm, respectively. This sequence is repeated 22 times with a total thickness of around 500 nm. Rapid thermal treatment tests were performed to study the phase development. The Ti2AlC MAX phase forms in a temperature range below 850 °C, whereas the Ti3AlC2 MAX phase starts to form at temperatures above 850 °C and reaches its highest phase purity at 950 °C. The thin film structures were studied by X-ray diffraction and Raman spectroscopy. Furthermore, the electrical and mechanical properties were investigated to gain more insights regarding the phase transformation and their influence on the thin film properties. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Tribological and mechanical performance of Ti2AlC and Ti3AlC2 thin films(John Wiley and Sons Inc, 2022-10-01)Mn+1AXn (MAX) phases are novel structural and functional materials with a layered crystal structure. Their unique properties such as good machinability, high electrical conductivity, low friction, and corrosion resistance are appealing for many engineering applications. Herein, Ti2AlC and Ti3AlC2 MAX thin films are synthesized by magnetron sputtering and subsequent thermal annealing. A multilayer approach is used to deposit single-element nanolayers of titanium, aluminum, and carbon onto silicon substrates with a double-layer-diffusion barrier of SiO2 and SixNy. Ti2AlC and Ti3AlC2 thin films (thickness ≈500 nm) are formed via rapid thermal annealing and verified by X-Ray diffraction. Nanoindentation tests show hardness values of about 11.6 and 5.3 GPa for Ti2AlC and Ti3AlC2, respectively. The tribological behavior of the Ti2AlC and Ti3AlC2 thin films against AISI 52100 steel balls under dry sliding conditions is studied using ball-on-flat tribometry. The resulting coefficient of friction (CoF) for Ti2AlC and Ti3AlC2 ranges between 0.21–0.42 and 0.64–0.91, respectively. The better tribological behavior observed for Ti2AlC thin films is ascribed to its smaller grain size, reduced surface roughness, and higher hardness. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Indirect excitation and luminescence activation of Tb doped indium tin oxide and its impact on the host's optical and electrical properties(IOP Publishing Ltd, 2022-05-26)The effect of adding terbium to indium tin oxide (ITO) thin films on the electrical, optical and light emission properties was investigated. The films were prepared by radio frequency dual magnetron sputtering, maintaining a high optical transmittance in the ultraviolet and visible spectral regions, and a low electrical resistivity ranging from 5 × 10 − 3 Ω ⋅ cm to 0.3 Ω ⋅ cm . Terbium-related luminescence is achieved after annealing at 470 ∘C in air at atmospheric pressure. Electrical resistivity and optical transmittance were measured after each annealing step to evaluate the compromise between the achieved light emission intensity, electrical and optical properties. Additionally, temperature dependence of Tb-related luminescence quenching was assessed by temperature-dependent photoluminescence measurements, from 83 to 533 K, under non-resonant excitation. Thermal quenching activation energies suggest an effective energy transfer mechanism from the ITO host to the rare-earth (RE) ions. This indirect excitation mechanism was modeled using a spherical potential-well and a tight-binding one-band approximation approaches, describing a short-range charge trapping process and subsequent formation of bound excitons to RE ion clusters.