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Item type:Publication, Revisiting the determination of the valence band maximum and defect formation in halide perovskites for solar cells: insights from highly sensitive near-UV photoemission spectroscopy(American Chemical Society, 2021-09-15)Using advanced near–UV photoemission spectroscopy (PES) in constant final state mode (CFSYS) with a very high dynamic range, we investigate the triple-cation lead halide perovskite Cs 0.05 (MA 0.17 FA 0.83 ) 0.95 Pb(I 0.83 Br 0.17 ) 3 and gain detailed insights into the density of occupied states (DOS) in the valence band and band gap. A valence band model is established which includes the parabolic valence band edge and an exponentially decaying band tail in a single equation. This allows us to precisely determine two valence band maxima (VBM) at different k -vectors in the angle-integrated spectra, where the highest one, resulting from the VBM at the R -point in the Brillouin zone, is found between −1.50 to −1.37 eV relative to the Fermi energy E F . We investigate quantitatively the formation of defect states in the band gap up to E F upon decomposition of the perovskites during sample transfer, storage, and measurements: during near–UV-based PES, the density of defect states saturates at a value that is around 4 orders of magnitude below the density of states at the valence band edge. However, even short air exposure, or 3 h of X-ray illumination, increased their density by almost a factor of six and ∼40, respectively. Upon prolonged storage in vacuum, the formation of a distinct defect peak is observed. Thus, near–UV CFSYS with modeling as shown here is demonstrated as a powerful tool to characterize the valence band and quantify defect states in lead halide perovskites. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Hybrid perovskite degradation from an optical perspective: a spectroscopic ellipsometry study from the deep ultraviolet to the middle infrared(Wiley, 2021-11-21)A quantitative analysis of the thermally induced degradation of various device‐relevant multi‐cation hybrid perovskite films is performed using spectroscopic ellipsometry, for temperatures between 80 and 120 °C. The studied compositions are a triple cation perovskite Cs0.05(MA0.17FA0.83)0.95Pb(Br0.17I0.83)3, a Rb‐containing variant Rb0.05Cs0.05(MA0.17FA0.83)0.90Pb(Br0.17I0.83)3, and a methylammonium‐free Rb0.05Cs0.10FA0.85PbI3 composition. A very wide combined spectral range of 200 nm to 25 μm is covered by combining the data from two separate instruments. The relative changes in organic cation concentrations are quantified from the middle infrared molecular absorption bands, leveraging the use of point‐by‐point fitting for increased sensitivity. Additionally, the formation of PbI2 and non‐perovskite δ‐CsPbI3 phases is evidenced from Bruggemann effective medium fits to the visible and ultraviolet complex refractive indices. Methylammonium is almost completely depleted from the relevant compositions within 100 to 285 min of thermal annealing. The MA‐free perovskite degrades faster at intermediate temperatures, which is attributed to phase instability due to the formation of δ‐CsPbI3 in addition to PbI2. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Analysis of the physical and photoelectrochemical properties of c-Si(p)/a-SiC:H(p) photocathodes for solar water splitting(IOP Publishing Ltd, 2021-05-13)The photoelectrochemical (PEC) properties of sputtered aluminum doped hydrogenated amorphous silicon carbide thin films grown on p-type crystalline silicon substrates were investigated in 1 M H 2 S O 4 solution under chopped light illumination. Optical and structural properties of the top absorber layer were systematically assessed after post-deposition isochronical annealing treatments. Samples exhibited a noticeable improvement of the opto-electronic properties after thermal treatments. In addition, an abrupt enhancement of the photocurrent was observed reaching a saturation value of 17 mA cm −2 at −1.75 V vs. Ag/AgCl (3.5 M KCl). In this research we propose that this enhancement effect is associated to a charge transfer kinetic mechanism influenced by surface states and the p-type substrate. The latter most likely due to the space charge region extending beyond the absorber layer reaching the substrate. Current density-potential and electrochemical impedance spectroscopy measurements in dark revealed a reduction of the S i O 2 native layer at cathodic potentials higher than −1 V vs. Ag/AgCl (3.5 M KCl), which contributes to the high charge transfer kinetic of the system. We believe that these results will contribute to understand the substrate influence in the PEC performance of top absorber layers in multilayer structures for solar water splitting. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Field effect passivation in perovskite solar cells by a LiF interlayer(John Wiley and Sons Inc, 2022-08-01)The fullerene C 60 is commonly applied as the electron transport layer in high‐efficiency metal halide perovskite solar cells and has been found to limit their open circuit voltage. Through ultra‐sensitive near‐UV photoelectron spectroscopy in constant final state mode (CFSYS), with an unusually high probing depth of 5–10 nm, the perovskite/C 60 interface energetics and defect formation is investigated. It is demonstrated how to consistently determine the energy level alignment by CFSYS and avoid misinterpretations by accounting for the measurement‐induced surface photovoltage in photoactive layer stacks. The energetic offset between the perovskite valence band maximum and the C 60 HOMO‐edge is directly determined to be 0.55 eV. Furthermore, the voltage enhancement upon the incorporation of a LiF interlayer at the interface can be attributed to originate from a mild dipole effect and probably the presence of fixed charges, both reducing the hole concentration in the vicinity of the perovskite/C 60 interface. This yields a field effect passivation, which overcompensates the observed enhanced defect density in the first monolayers of C 60 . - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Indirect excitation and luminescence activation of Tb doped indium tin oxide and its impact on the host's optical and electrical properties(IOP Publishing Ltd, 2022-05-26)The effect of adding terbium to indium tin oxide (ITO) thin films on the electrical, optical and light emission properties was investigated. The films were prepared by radio frequency dual magnetron sputtering, maintaining a high optical transmittance in the ultraviolet and visible spectral regions, and a low electrical resistivity ranging from 5 × 10 − 3 Ω ⋅ cm to 0.3 Ω ⋅ cm . Terbium-related luminescence is achieved after annealing at 470 ∘C in air at atmospheric pressure. Electrical resistivity and optical transmittance were measured after each annealing step to evaluate the compromise between the achieved light emission intensity, electrical and optical properties. Additionally, temperature dependence of Tb-related luminescence quenching was assessed by temperature-dependent photoluminescence measurements, from 83 to 533 K, under non-resonant excitation. Thermal quenching activation energies suggest an effective energy transfer mechanism from the ITO host to the rare-earth (RE) ions. This indirect excitation mechanism was modeled using a spherical potential-well and a tight-binding one-band approximation approaches, describing a short-range charge trapping process and subsequent formation of bound excitons to RE ion clusters. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, New Optical Dispersion Models for the Accurate Description of the Electrical Permittivity in Direct and Indirect Semiconductors(Institute of Physics, 2023-09-07)We propose new optical dispersion models to describe the imaginary part of the electrical permittivity of dielectric and semiconductor materials in the fundamental absorption region. We work out our procedure based on the well-known structure of the semi-empirical Tauc-Lorentz dispersion model and the band-fluctuations approach to derive a five-parameter formula that describes the Urbach, Tauc and high-absorption regions of direct and indirect semiconductors. Main features of the dispersion models are the self-consistent generation of the exponential Urbach tail below the bandgap and the incorporation of the Lorentz oscillator behavior due to electronic transitions above the fundamental region. We apply and test these models on optical data of direct (MAPbI3, gallium arsenide and indium phosphide), indirect (gallium phosphide and crystalline silicon), and amorphous hydrogenated silicon semiconductors, accurately describing the spectra of the imaginary part of the electrical permittivity. Lastly, we compare our results with other similarly inspired dispersion models to assess the optical bandgap, Urbach tail and oscillator central resonance energy.